6
RF Device Data
Freescale Semiconductor
MRF6S23100HR3 MRF6S23100HSR3
TYPICAL CHARACTERISTICS
11
18
0.1
0
70
Pout, OUTPUT POWER (WATTS) CW
10
16
14
12
60
C
50
C
40
30
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
15
13
VDD
= 28 Vdc
IDQ
= 1000 mA
f = 2350 MHz
ηD
Gps
IM3 (dBc), ACPR (dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
-60
-1 0
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 1000 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
5th Order
3rd Order
-2 0
-3 0
-4 0
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
-55
Pout, OUTPUT POWER (WATTS) AVG.
35
-20
C
-30
25
20
-35
10
10 100
-40
40
57
P3dB = 51.88 dBm (154.14 W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 1000 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2350 MHz
53
49
47
33 3634
35
Actual
Ideal
55
51
32
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
160
10
16
0
12
11
20
13
14
IDQ
= 1000 mA
f = 2350 MHz
30
-45
ηD
5 -50ACPR
25C
VDD
= 24
V
28
V
32
V
38
1
-25
40 60 80
10
20
P1dB = 51.18 dBm (131.19 W)
15
TC
= 25
C
-30C
85
25C
TC
= -30
C
85C
25C
85
-30C
100
25
15
100
VDD= 28 Vdc, IDQ
= 1000 mA
f1 = 2345 MHz, f2 = 2355 MHz
2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
39
37
-30C
85C
25C
17
1
120 140
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